Abstract:This work demonstrates a universal strategy for robust growth of high‐quality transition metal dichalcogenide (TMD) vertical heterostructures and a novel design concept for the fabrication of high mobility and high responsivity photodetectors based on 2D TMD vertical heterostructures, which holds promise for the next‐generation photodetectors. Two dimension (2D) transition metal dichalcogenides (TMD) heterostructures have opened unparalleled prospects for next‐generation electronic and optoelectronic applications due to their atomic‐scale thickness and distinct physical properties. The chemical vapor deposition (CVD) method is the most feasible approach to prepare 2D TMD heterostructures. However, the synthesis of 2D vertical heterostructures faces competition between in‐plane and out‐of‐plane growth, which makes it difficult to precisely control the growth of vertical heterostructures. Here, a universal and controllable strategy is reported to grow various 2D TMD vertical heterostructures through an ammonium‐assisted CVD process. The ammonium‐assisted strategy shows excellent controllability and operational simplicity to prevent interlayer diffusion/alloying and thermal decomposition of the existed TMD templates. Ab initio simulations demonstrate that the reaction between NH4Cl and MoS2 leads to the formation of MoS3 clusters, promoting the nucleation and growth of 2D MoS2 on existed 2D WS2 layer, thereby leading to the growth of vertical heterostructure. The resulting 2D WSe2/WS2 vertical heterostructure photodetectors demonstrate an outstanding optoelectronic performance, which are comparable to the performances of photodetectors fabricated from mechanically exfoliated and stacked vertical heterostructures. The ammonium‐assisted strategy for robust growth of high‐quality vertical van der Waals heterostructures will facilitate fundamental physics investigations and device applications in electronics and optoelectronics.

Epitaxial growth of bilayer MoS2/MoSe2 heterostructure with high-responsivity enhanced by photogating effect

A van der Waals pn heterojunction with organic/inorganic semiconductors

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure

Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Controllable Photocurrent Generation in Lateral Bilayer MoS2-WS2 Heterostructure

Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging

Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal–Organic Vapor-Phase Epitaxy and Their Application in Photodetectors

Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium‐Assisted CVD Strategy

Epitaxial Growth of 1D Te/2D MoSe2 Mixed‐Dimensional Heterostructures for High‐Efficient Self‐Powered Photodetector

Controlled growth of vertically stacked In2Se3/WSe2 heterostructures for ultrahigh responsivity photodetector

Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics

Synthesis of Few-Layer 2H-Mose2 Thin Films with Wafer-Level Homogeneity for High-Performance Photodetector

High Performance Optoelectronics Based on CVD MoS2

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces

Epitaxial Growth of Two-Dimensional MoO 2 -MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes