Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

A fast 2D MoS2 photodetector with ultralow contact resistance

Wafer-Scale Atomic Assembly for 2D Multinary Transition Metal Dichalcogenides for Visible and NIR Photodetection

Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging

Perovskite quantum dot-induced monochromatization for broadband photodetection of wafer-scale molybdenum disulfide

Bifunctional Semimetal as a Plasmonic Resonator and Ohmic Contact for an Ultrasensitive MoS 2 Photodetector

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Bifunctional Semimetal As a Plasmonic Resonator and Ohmic Contact for an Ultrasensitive MoS2 Photodetector

Engineering electrode interfaces for telecom-band photodetection in MoS2/Au heterostructures via sub-band light absorption

Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors

Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors

MoS2 Based Photodetectors: A Review

High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure

Epitaxial growth of bilayer MoS2/MoSe2 heterostructure with high-responsivity enhanced by photogating effect

High Performance Optoelectronics Based on CVD MoS2

Multi‐Controllability of Ambipolar Photoconductivity in Transition Metal Dichalcogenides Van der Waals Heterostructures

Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides

High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 Van Der Waals Heterojunctions

Asymmetrically Encapsulated vertical ITO/MoS2/Cu2O photodetector with ultra-high sensitivity