Abstract:Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced gap (MIGS) states at the metals-monolayer MoS$_2$ interface limits the application of optoelectronic devices based on conventional metals because of the high contact resistance of the Schottky contacts. On the other hand, a semimetal-TMD-semimetal device can overcome this limitation, where the MIGS are sufficiently suppressed and can result in ohmic contacts. Here we demonstrate the optoelectronic performance of a bismuth-monolayer (1L) MoS$_2$-bismuth device with ohmic electrical contacts and extraordinary optoelectronic properties. To address the wafer-scale production, we grew full coverage 1L MoS$_2$ by using chemical vapor deposition method. We measured high photoresponsivity of 300 A/W in the UV regime at 77 K, which translates into an external quantum efficiency (EQE) ~ 1000 or $10^5$%. We found that the 90% rise time of our devices at 77 K is 0.1 ms, which suggests that the current devices can operate at the speed of ~ 10 kHz. The combination of large-array device fabrication, high sensitivity, and high-speed response offers great potential for applications in photonics that includes integrated optoelectronic circuits.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop an ultraviolet photodetector (UVPD) that is efficient, highly sensitive and suitable for large - scale production. Specifically, the author aims to overcome the problem of Schottky barriers formed by traditional metal contacts on monolayer transition - metal dichalcogenides (TMDs) such as MoS₂. Such barriers can lead to high contact resistance and poor current - transport characteristics. By using semimetallic bismuth (Bi) as the contact material, the author hopes to achieve ohmic contact and demonstrate its excellent performance in ultraviolet - light detection. ### Overview of Main Problems 1. **Schottky Barriers Limit Device Performance**: The interface between traditional metals and monolayer MoS₂ can form metal - induced gap states (MIGS), resulting in Schottky barriers, which limit the performance of photodetectors, including high contact resistance and nonlinear current - voltage characteristics. 2. **Achieving Ohmic Contact**: Using semimetals (such as bismuth) as contact materials can suppress MIGS, thereby achieving ohmic contact and improving the electrical and photoelectric performance of the device. 3. **Requirement for Large - Scale Production**: In order to achieve large - scale applications, the problem of large - area growth of monolayer MoS₂ needs to be solved. The author achieved full - coverage growth of monolayer MoS₂ by the chemical vapor deposition (CVD) method. ### Solutions - **Material Selection**: Use semimetallic bismuth (Bi) as the contact material to suppress MIGS and achieve ohmic contact. - **Growth Method**: Prepare large - area monolayer MoS₂ by the chemical vapor deposition (CVD) method. - **Device Structure**: Construct a photodetector with a Bi - MoS₂ - Bi structure, demonstrating its high responsivity and external quantum efficiency (EQE) under ultraviolet light. ### Experimental Results - **High Responsivity**: At 77 K, the measured photoresponsivity is 300 A/W, and the corresponding external quantum efficiency (EQE) is approximately 1000 or 105%. - **Fast Response Time**: The 90% rise time is 0.1 ms, indicating that the device can operate at a speed of approximately 10 kHz. - **Temperature Dependence**: As the temperature rises, the photoresponse gradually weakens and almost disappears near room temperature. Through these studies, the author has demonstrated that ultraviolet photodetectors based on the semimetal - monolayer TMDs - semimetal structure have great application potential, especially in the fields of integrated optoelectronic devices and large - scale ultraviolet - light detection.

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