Abstract:A surrounding homojunction MoS2 photodetector featuring a localized p‐type nitrogen plasma doping region and an underlying high‐mobility channel is engineered. This design boosts the efficient separation and collection of photogenerated carriers. Moreover, doing‐induced bands within the bandgap of MoS2 enables an extrinsic broadband response to short‐wave infrared, paving the way for next‐generation multifunctional imaging systems and high‐performance photonic chips. As unique building blocks for advancing optoelectronics, 2D semiconducting transition metal dichalcogenides have garnered significant attention. However, most previously reported MoS2 photodetectors respond only to visible light with limited absorption, resulting in a narrow spectral response and low sensitivity. Here, a surrounding homojunction MoS2 photodetector featuring localized p‐type nitrogen plasma doping on the surface of n‐type MoS2 while preserving a high‐mobility underlying channel for rapid carrier transport is engineered. The establishment of p‐n homojunction facilitates the efficient separation of photogenerated carriers, thereby boosting the device's intrinsic detection performance. The resulting photoresponsivity is 6.94 × 104 A W−1 and specific detectivity is 1.21 × 1014 Jones @ 638 nm, with an optimal light on/off ratio of ≈107 at VGS = −27 V. Notably, the introduction of additional bands within MoS2 bandgap through nitrogen doping leads to an extrinsic broadband response to short‐wave infrared. The device exhibits a photoresponsivity of 34 A W−1 and a specific detectivity of up to 5.92 × 1010 Jones @ 1550 nm. Furthermore, the high‐performance broadband response is further demonstrated through imaging and integration with waveguides, paving the way for next generation of multifunctional imaging systems and high‐performance photonic chips.

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