Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Synthesis of millimeter-scale transition metal dichalcogenides single crystals

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Seeded 2D Epitaxy of Large-Area Single-Crystal Films of the Van Der Waals Semiconductor 2H MoTe2.

Molecular-beam epitaxy of monolayer MoSe<sub>2</sub>: growth characteristics and domain boundary formation

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride

Heteroepitaxial Growth of High Optical Quality, Wafer-Scale van der Waals Heterostrucutres

Step-edge Controlled Fast Growth of Wafer-Scale MoSe2 Films by MOCVD

Centimeter-Scale Nearly Single-Crystal Monolayer Mos2 Via Self Limiting Vapor Deposition Epitaxy

Two-Step Growth of Two-Dimensional Wse2/Mose2 Heterostructures

Seeded Growth Of High-Quality Transition Metal Dichalcogenide Single Crystals Via Chemical Vapor Transport

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2.

Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals

Controllable Growth of Monolayer MoS2 and MoSe2 Crystals Using Three-temperature-zone Furnace