Two-step Growth of VSe2 Films and Their Photoelectric Properties

Yu Zeng,Shengli Zhang,Xiuling Li,Jianping Ao,Yun Sun,Wei Liu,Fangfang Liu,Peng Gao,Yi Zhang
DOI: https://doi.org/10.1088/1674-1056/28/5/058101
2019-01-01
Chinese Physics B
Abstract:We put forward a two-step route to synthesize vanadium diselenide (VSe 2 ), a typical transition metal dichalcogenide (TMD). To obtain the VSe 2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400 °C selenization temperature, we successfully prepare VSe 2 films on both glass and Mo substrates. The prepared VSe 2 has the characteristic of preferential growth along the c -axis, with low transmittance. It is found that the contact between Al and VSe 2 /Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe 2 /Mo sample reveal that the VSe 2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe 2 in photovoltaic devices.
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