Abstract:Gallium nitride – zinc oxide (GaN-ZnO) solid solutions have been realized as potential photocatalysts for overall water splitting due to a narrowing of the band-gap into the visible region of the solar spectrum. Although there has been much experimental and theoretical work on this novel class of semiconductors many questions about the nature of their electronic and chemical properties remain unanswered. In particular the mechanism of band-gap reduction in these materials is not clearly understood. It is also unclear what the local chemical environment of gallium, zinc, nitrogen, and oxygen is in both the surface and bulk of these solid solutions. These materials have unusual optical emission properties exhibiting broad visible emission bands that are substantially red-shifted from observed band-gap energies. Since crystallinity, electronic structure, defects, and local chemical environments (both bulk and surface) all affect photocatalytic efficiency further understanding of the aforementioned properties of these materials is necessary. The focus of this thesis is on the analysis of GaN-ZnO nanostructures by X-ray absorption fine structure (XAFS), including the near edge region, X-ray absorption near edge structure (XANES) and the extended region, extended X-ray absorption fine structure (EXAFS) to further the understanding of the local chemical environment (both bulk and surface) and structure of these materials using tunable X-rays from a synchrotron light source. X-ray excited optical luminescence (XEOL) has also been used to study the optical emission and near-band-gap (NBG) properties of these materials. From XANES it has been shown that there is local chemical disorder of gallium nitride and zinc oxide phases upon solid solution formation, but, there is also strong short-range order which is evident in the EXAFS. XEOL studies have revealed that optical luminescence observed from these materials is of complex origins including zinc-related acceptor levels in the bulk and defects in the complex surface oxide. Preliminary results from time-resolved XEOL experiments have provided evidence of two NBG emission components related to GaN and ZnO phases in the material respectively. These results suggest that band-gap reduction observed in these materials is due to repulsion between conduction band onsets at phase interfaces within a disordered solid solution.

2D XAFS–XEOL Mapping of Ga1–xZnxN1–xOx Nanostructured Solid Solutions

X-ray Absorption Fine Structure and X-ray Excited Optical Luminescence Studies of Gallium Nitride - Zinc Oxide Solid Solution Nanostructures

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Direct Observation of Optical Band Gap Components in Ga<sub>1-<i>x</i></sub>Zn<i><sub>x</sub></i>N<sub>1-<i>x</i></sub>O<i><s ub>x</sub></i> Solid-Solution Nanoparticles

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Nitridation Temperature Effects on Electronic and Chemical Properties of (ga1–xznx)(n1–xox) Solid Solution Nanocrystals

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Doping and Luminescence Mechanisms of Broadband NIR‐II Emitting Zn2(1−x)Ni2xGa3Ge0.75O8 Nanoparticles

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Synthesis and Optical Properties of Gan/Zno Solid Solution Nanocrystals

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films

The Local and Electronic Structure Study of LuxGd1−xVO4 (0 ≤ x ≤ 1) Solid Solution Nanocrystals

Origin of luminescence from ZnO/CdS core/shell nanowire arrays

Analysis of Local Structures Around Ni Atoms Doped in Zno-Based Diluted Magnetic Semiconductors by Fluorescence Exafs

Simultaneous Nucleation and Growth of Quaternary Polar and Nonpolar GaN–ZnO Solid Solution Nanowires and Nanorods

Electronic Structure of Gainn Semiconductors Investigated by X-Ray Absorption Spectroscopy

Average And Local Crystal Structures Of (Ga1-Xznx)(N1-Xox) Solid Solution Nanoparticles

Combining high X-ray energy photon-in photon-out spectroscopies and X-ray scattering to experimentally assess the emergence of electronic- and atomic structure of ZnS nanorods