Abstract:The III–V ternary semiconductors InxGa1−xAs (0 ≤ x ≤ 1) have attracted a great deal of interests in electronics and optoelectronics due to their superior transport properties, high-efficiency thermoelectric applications and so on. In this work, the optoelectronic properties of bulk InxGa1−xAs materials and the phase transition of InxGa1−xAs nanowires (NWs) at different Indium (In) component have been investigated by first-principles calculation using density functional theory. Different calculation models have been chosen to simulate the (2 × 2 × 1) supercells of pure bulk InxGa1−xAs structures and the most stable one has been adopted for further calculation. NWs models of In0.25Ga0.75As and In0.75Ga0.25As have been employed to represent the In-rich and Ga-rich structures, respectively. Our calculation results have clearly shown that the In-rich nanostructure show more zinc-blende characteristic while the wurtzite phase exhibit dominating role in the Ga-rich NWs. The band gap of bulk models decreases with increasing the In component, which is well consistent with the theoretical formula. With the In component increasing, the lower valence band shifts toward high energy region and the peak value increases, while the absorption edge and peak value move to lower energy side and the static dielectric constant increases. The metal reflective properties emerge in certain photon energy range. Our results offer the guidance to make use of the different properties of InxGa1−xAs materials at different In component.

Electronic Structure of Gainn Semiconductors Investigated by X-Ray Absorption Spectroscopy

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces

Mn Occupations in Ga1-Xmnxn Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

First Principles Study on the Structural Stability and Optoelectronic Properties of InxGa1−xAs Materials with Different Indium Component

The Local Structure of Ga1-xMnxN Dilute Magnetic Semiconductors Determined by X-ray Absorption Near Structure

Spectroscopy of Semiconductor Heteroepitaxial Structures Based on InGaAs for the Development of NIR Photodetectors

Electronic Structures and Optical Properties of Ga-Rich InxGa1−xN Nanotubes

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

Local atomic structure around Mn ions in GaN:Mn thin films: Quantitative XANES analysis

2D XAFS–XEOL Mapping of Ga1–xZnxN1–xOx Nanostructured Solid Solutions

The Discrepancies Between Theory and Experiment in the Optical Emission of Monolayer In(Ga)N Quantum Wells Revisited by Transmission Electron Microscopy

Determination of the Surface Band Bending in in X Ga1-x N Films by Hard X-Ray Photoemission Spectroscopy.

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Alloy Composition Fluctuation And Band Edge Energy Structure Of In-Rich Inxga1-Xn Layers Investigated By Systematic Spectroscopy