Abstract:The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to correctly reproduce the band gap, and band unfolding to reveal the character of the bands within the entire Brillouin zone. As expected, relatively small amounts of nitrogen introduced to Ga(PAs) lead to formation of an intermediate band below the conduction band which is consistent with the band anticrossing model, widely used to describe the electronic band structure of dilute nitrides. However, in this study calculations are performed in the whole Brillouin zone and reveal the significance of correct description of the band structure near the edges of Brillouin zone, especially for indirect band gap P-rich host alloy, which may not be properly captured with simpler models. The theoretical results are compared with experimental studies, confirming their reliability. The influence of nitrogen on the band structure is discussed in terms of application of Ga(PAsN) in optoelectronic devices such as intermediate band solar cells and light emitters. It is found that Ga(PAsN) with low N and As concentration has a band structure suitable for integration in Si tandem solar cells, since the lattice mismatch between Si and Ga(PAsN) is small in this case. Moreover, it is concluded that P-rich Ga(PAsN) alloys with low N concentration have a promising band structure for two colour emitters. Additionally, the effect of nitrogen incorporation on the carrier localization is studied and discussed.

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Optical Transitions In Ganas/Gaas Single Quantum Well

Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

Inter and intra band impurity-related absorption in (In,Ga)N/GaN QW under composition, size and impurity effects

Interband Luminescence and Absorption of GaNAs/GaAs Single-Quantum-well Structures

The electron effective mass at the bottom of the GaNAs conduction band

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Effect of Low Nitrogen Concentrations on the Electronic Properties of Inas1-Xnx

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states

The Discrepancies Between Theory and Experiment in the Optical Emission of Monolayer In(Ga)N Quantum Wells Revisited by Transmission Electron Microscopy

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Anomalous Temperature Dependence of Photoluminescence in Gainnas/Gaas Multiple Quantum Wells

Photocurrent Spectroscopy On Gainn/Gan Multiple Quantum Well Solar Cell Structures

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Exciton states and interband optical transitions in InGaN quantum dots

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography