Abstract:This study investigates the impact of calcination temperature on Zinc Oxide (ZnO) films deposited on quartz substrates, focusing on their structural, optical, and electronic properties. X-ray diffraction (XRD) analysis reveals a shift in crystallographic orientation from the (002) to the (101) direction at higher temperatures, attributed to increased Zn-to-ZnO ion ratio and the presence of metallic impurities or interstitial zinc (Zn i ) defects. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy determine the ZnO/Si heterojunction band arrangement and band offset investigation which yields the values of ~ 2.49 eV for the valance band offset and ~ 0.33 eV for the conduction band offset. These studies are in great agreement with the available theoretical studies. Consequently, using the band offset values and energy levels, the band diagram of the ZnO /Si heterojunction has been presented, which is crucial for understanding charge transport in photovoltaic devices. Although there are few reports of this type of heterojunction solar cell, the presently fabricated ZnO/Si solar cell exhibits an efficiency ~ 5.5% with high open circuit voltage ~ 0.78 V, short circuit current density ~ 14.1 mA/cm 2 , and FF ~ 0.51. These findings underscore the importance of defect engineering and crystalline optimization in enhancing ZnO-based device performance for future optoelectronic applications.

Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

Energy Band Alignment Of Ingazno4/Si Heterojunction Determined By X-Ray Photoelectron Spectroscopy

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Band Offsets in Zro2/Ingazno4 Heterojunction

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Junction Properties of Nitrogen-Doped Zno Thin Films

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Band Offsets of Tiznsno/Si Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Band Alignment of Indium–gallium–zinc Oxide/β-Ga2o3 $(\bar{2}01)$ Heterojunction Determined by Angle-Resolved X-ray Photoelectron Spectroscopy

Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

Band Alignment and Interfacial Structure of ZnO/Si Heterojunction with Al2O3 and HfO2 As Interlayers

Theoretical Prediction of the Band Offsets at the ZnO/anatase TiO2 and GaN/ZnO Heterojunctions Using the Self-Consistent Ab Initio DFT/GGA-1/2 Method

Band lineup of SiOx/ZnS (111) heterojunction: a synchrotron radiation photoemission study

Measurement of Zno/Al2o3 Heterojunction Band Offsets by in Situ X-Ray Photoelectron Spectroscopy

Interface band alignment engineering of ZnO/Si heterojunction solar cells with high open circuit voltage

Electronic structures of Zn 1− x Ga x O 1− x N x and band offsets of the ZnO/Zn 1− x Ga x O 1− x N x heterojunction across the entire concentration range from first principles