Abstract:Accurate determination of the band offsets of a heterostructure is essential to its study and application. In this paper, we use synchrotron radiation photoelectron spectroscopy to determine the band offset of ZnO/PbTe heterostructure. The valence band offset is 2.56 eV, and the conduction band offset is 0.49 eV, which indicates that the heterostructure has a type-I band alignment. By performing the depth scanning measurement, we find there are two bonding structures at the interface of ZnO/PbTe heterostructure, corresponding to Pb-O bonding (low energy side) and Pb-Te bonding (high energy side). At the interface of ZnO/PbTe heterostructure, the conduction band offset is much smaller than the valence band offset which is conducive to the transportation of excited electrons in PbTe source layer to ZnO electrode. Due to the unique band structure the ZnO/PbTe heterostructure has potential applications in the fabrication of high efficiency solar cells, mid infrared detectors and lasers.

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Band Offsets of Tiznsno/Si Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Band Offsets in Zro2/Ingazno4 Heterojunction

Energy Band Alignment Of Ingazno4/Si Heterojunction Determined By X-Ray Photoelectron Spectroscopy

Band Alignments at Interface of Zno/Fapbi(3) Heterojunction by X-Ray Photoelectron Spectroscopy

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Valence-Band Offset Of Epitaxial Zno/Mgo (111) Heterojunction Determined By X-Ray Photoelectron Spectroscopy

Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

Band Alignment of Indium–gallium–zinc Oxide/β-Ga2o3 $(\bar{2}01)$ Heterojunction Determined by Angle-Resolved X-ray Photoelectron Spectroscopy

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

The Band Offset at CdS/Cu 2 ZnSnS 4 Heterojunction Interface

Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy

Mg Composition Dependent Band Offsets of Zn1-Xmgxo/Zno Heterojunctions

Small Valence Band Offsets of Non-Polar ZnO/Zn1−Mg O Heterojunctions Measured by X-ray Photoelectron Spectroscopy

Band Offsets at the Inalgaas/Inalas (001) Heterostructures Lattice Matched to an Inp Substrate

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ( 201 ) Heterojunctions

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions.

Experimental Determination of Valence Band Offset at Pbte/Ge(100) Interface by Synchrotron Radiation Photoelectron Spectroscopy

Band Alignment at the Interface of Pbte/Snte Heterojunction Determined by X-Ray Photoelectron Spectroscopy