Band Offsets in Zro2/Ingazno4 Heterojunction

Jianke Yao,Shengdong Zhang,Li Gong

DOI: https://doi.org/10.1063/1.4750069

IF: 4

2012-01-01

Applied Physics Letters

Abstract:X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-V) of amorphous InGaZnO4 (a-IGZO)/ZrO2 heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of Delta E-V = 0 eV was obtained by using the Ga and Zn 2p(3) and In 3d(3) energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO2, respectively, this would indicate a conduction band offset of 2.7 eV in the system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750069]