Asymmetric Interface Band Alignments of Cu2o/Zno and Zno/Cu2o Heterojunctions

Meijia Yang,Liping Zhu,Yaguang Li,Ling Cao,Yanmin Guo
DOI: https://doi.org/10.1016/j.jallcom.2013.05.033
IF: 6.2
2013-01-01
Journal of Alloys and Compounds
Abstract:X-ray photoelectron spectroscopy was used to investigate the valence-band offsets (VBOs) of the Cu2O-ZnO heterojunctions fabricated by magnetron sputtering. A significant forward-backward asymmetry was observed in the band alignments of Cu2O/ZnO-ZnO/Cu2O heterojunctions. The valence band offsets of 2.91 eV and 2.52 eV were achieved in Cu2O/ZnO and ZnO/Cu2O heterojunctions respectively. The asymmetry was attributed to the lattice distortion of the Cu2O at the interface of Cu2O/ZnO heterojunction. The compressed Cu2O lattices lead to the upward shift of the top of the valence-band of Cu2O, and thus the measured VBO of Cu2O/ZnO is larger than that of ZnO/Cu2O. Considering the band alignments, the ZnO/Cu2O structure is expected to have more advantage in photovoltaic application than Cu2O/ZnO structure. (c) 2013 Elsevier B.V. All rights reserved.
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