Abstract:We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence band offsets at the heterointerface in excess of 1 eV. ZnO/NiO junctions exhibit a so called type-II band alignment, making electron-hole recombination the only process by which a current can vertically flow through the structure. These heterojunctions are nevertheless shown to be of practical use in efficient optoelectronic devices, as exemplified here by our UV-converting transparent solar cells. These devices, although exhibiting high conversion efficiencies, suffer from two light-activated recombination channels connected to the type-II interface, one of which we identify and analyse in more detail here. Furthermore, CdO/NiO contacts were studied - a heterostructure with even larger band offsets such that a type-III band alignment is achieved. This situation theoretically enables the development of a 2-dimensional electronic system consisting of topologically protected states. We present experiments demonstrating that the CdO/NiO heterostructure indeed hosts a conductive layer absent in both materials when studied separately.

Orientation Dependent Band Alignment for P-Nio/N-Zno Heterojunctions

Correlation of Zno Orientation to Band Alignment in P-Mg0.2ni0.8o/N-Zno Interfaces

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Band Alignments at Interface of Zno/Fapbi(3) Heterojunction by X-Ray Photoelectron Spectroscopy

Junction Properties of Nitrogen-Doped Zno Thin Films

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Band Alignment and Interfacial Structure of ZnO/Si Heterojunction with Al2O3 and HfO2 As Interlayers

Band Alignment of Ultra-Thin Hetero-Structure Zno/Tio2 Junction

The Role of Band Alignment in P-Type Conductivity of Na-Doped Znmgo: Polar Versus Non-Polar

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions

Band alignment of wide bandgap NiO/MoO3 and NiO/WO3 p-n heterojunctions studied by high-resolution X-ray photoelectron spectroscopy

Band alignment of Zn 0.778 Cd 0.222 O/MgO(001) heterointerface determined by X-ray photoelectron spectroscopy

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Measurement of Zno/Al2o3 Heterojunction Band Offsets by in Situ X-Ray Photoelectron Spectroscopy

Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II P-N Heterojunctions

Valence-band Offset of N -Zn 0.8 Mg 0.2 O/ P -Ni 0.8 Mg 0.2 O Heterojunction with Tunable Bandgaps of Both Sides Measured by X-ray Photoelectron Spectroscopy

Nickel oxide-based heterostructures with large band offsets

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles