Abstract:The ZnO/GaN heterojunctions are extensively investigated now, owing to their good luminescent properties and devisable capability to form efficient hybrid structures. An electron-blocking layer inserted into heterojunctions can greatly change their properties. In this work, n-ZnO/β-InxGa2-xO3/p-GaN heterojunctions have been successfully formed using atomic layer deposition methods. We show that the doping of In can effectively tune the band edges of the heterojunctions. First-principle calculations reveal that the bandgap of bulk β-InxGa2-xO3 shrinks linearly with the increase in In contents, accompanied by an upward movement of the valence band maximum and a downward movement of the conduction band minimum. As the indium concentrations increase, the valence band offsets show an upward movement at both the InxGa2-xO3/GaN and ZnO/InxGa2-xO3 interfaces, while the conduction band offsets present different trends. A broad, reddish yellow-green emission appears after In doping, which verifies the effect of band alignment. What is more, we show that the amorphization of InxGa2-xO3 can play an important role in tuning the band edge. This work provides access to a series of band offsets tunable heterojunctions and can be used for the further design of direct white light-emitting diodes without any phosphors, based on this structure.

Investigation Of Energy Band At Atomic-Layer-Deposited Zno/Beta-Ga2o3 ((2)Over-Bar01) Heterojunctions

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions.

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ( 201 ) Heterojunctions

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ($$ \overline{2}01 $$) Heterojunctions

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) Heterojunctions

Investigation Of Energy Band At Atomic Layer Deposited Azo/Beta-Ga2o3 ((2)Over-Bar01) Heterojunctions

Investigation of energy band at atomic layer deposited AZO/β-Ga 2 O 3 ( 201 ) heterojunctions

Investigation of energy band at atomic layer deposited AZO/β-Ga 2 O 3 ([Formula: see text]) heterojunctions.

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Mg Composition Dependent Band Offsets of Zn1-Xmgxo/Zno Heterojunctions

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

Band Alignment and Interfacial Structure of ZnO/Si Heterojunction with Al2O3 and HfO2 As Interlayers

Valence-Band Offset Of Epitaxial Zno/Mgo (111) Heterojunction Determined By X-Ray Photoelectron Spectroscopy

Investigation of the electronic structure of two-dimensional GaN/Zr2CO2 hetero-junction: Type-II band alignment with tunable bandgap

Band Alignments at Interface of Zno/Fapbi(3) Heterojunction by X-Ray Photoelectron Spectroscopy

Small Valence Band Offsets of Non-Polar ZnO/Zn1−Mg O Heterojunctions Measured by X-ray Photoelectron Spectroscopy