Abstract:We report the calculated fundamental band gaps of \emph{wurtzite} ternary alloys Zn$_{1-x}$M$_x$O (M=Mg, Cd) and the band offsets of the ZnO/Zn$_{1-x}$M$_x$O heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based on density functional theory within the linear muffin-tin orbital (LMTO) approach where the modified Becke-Johnson (MBJ) semi-local exchange is used to accurately produce the band gaps, and the coherent potential approximation (CPA) is applied to deal with configurational average for the ternary alloys. The combined LMTO-MBJ-CPA approach allows one to simultaneously determine both the conduction band and valence band offsets of the heterojunctions. The calculated band gap data of the ZnO alloys scale as $E_g=3.35+2.33x$ and $E_g=3.36-2.33x+1.77x^2$ for Zn$_{1-x}$Mg$_x$O and Zn$_{1-x}$Cd$_x$O, respectively, where $x$ being the impurity concentration. These scaling as well as the composition dependent band offsets are quantitatively compared to the available experimental data. The capability of predicting the band parameters and band alignments of ZnO and its ternary alloys with the LMTO-CPA-MBJ approach indicate the promising application of this method in the design of emerging electronics and optoelectronics.

Valence-Band Offset Of Epitaxial Zno/Mgo (111) Heterojunction Determined By X-Ray Photoelectron Spectroscopy

Mg Composition Dependent Band Offsets of Zn1-Xmgxo/Zno Heterojunctions

Valence Band Offset of N-Zno/p-mgxni1−xo Heterojunction Measured by X-Ray Photoelectron Spectroscopy

Small Valence Band Offsets of Non-Polar ZnO/Zn1−Mg O Heterojunctions Measured by X-ray Photoelectron Spectroscopy

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Valence-band Offset of N -Zn 0.8 Mg 0.2 O/ P -Ni 0.8 Mg 0.2 O Heterojunction with Tunable Bandgaps of Both Sides Measured by X-ray Photoelectron Spectroscopy

Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

Correlation of Zno Orientation to Band Alignment in P-Mg0.2ni0.8o/N-Zno Interfaces

Valence-band Offset of P-Nio/n-zno Heterojunction Measured by X-ray Photoelectron Spectroscopy

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Band Offsets in Zro2/Ingazno4 Heterojunction

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Composition dependent band offsets of ZnO and its ternary alloys

Band Offsets of Tiznsno/Si Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Band Alignments at Interface of Zno/Fapbi(3) Heterojunction by X-Ray Photoelectron Spectroscopy

Investigation Of Energy Band At Atomic-Layer-Deposited Zno/Beta-Ga2o3 ((2)Over-Bar01) Heterojunctions

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions.

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ( 201 ) Heterojunctions