Abstract:We report the calculated fundamental band gaps of \emph{wurtzite} ternary alloys Zn$_{1-x}$M$_x$O (M=Mg, Cd) and the band offsets of the ZnO/Zn$_{1-x}$M$_x$O heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based on density functional theory within the linear muffin-tin orbital (LMTO) approach where the modified Becke-Johnson (MBJ) semi-local exchange is used to accurately produce the band gaps, and the coherent potential approximation (CPA) is applied to deal with configurational average for the ternary alloys. The combined LMTO-MBJ-CPA approach allows one to simultaneously determine both the conduction band and valence band offsets of the heterojunctions. The calculated band gap data of the ZnO alloys scale as $E_g=3.35+2.33x$ and $E_g=3.36-2.33x+1.77x^2$ for Zn$_{1-x}$Mg$_x$O and Zn$_{1-x}$Cd$_x$O, respectively, where $x$ being the impurity concentration. These scaling as well as the composition dependent band offsets are quantitatively compared to the available experimental data. The capability of predicting the band parameters and band alignments of ZnO and its ternary alloys with the LMTO-CPA-MBJ approach indicate the promising application of this method in the design of emerging electronics and optoelectronics.

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Valence Band Offset of N-Zno/p-mgxni1−xo Heterojunction Measured by X-Ray Photoelectron Spectroscopy

Valence-band Offset of P-Nio/n-zno Heterojunction Measured by X-ray Photoelectron Spectroscopy

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

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Small Valence Band Offsets of Non-Polar ZnO/Zn1−Mg O Heterojunctions Measured by X-ray Photoelectron Spectroscopy

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Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

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Investigation Of Energy Band At Atomic-Layer-Deposited Zno/Beta-Ga2o3 ((2)Over-Bar01) Heterojunctions

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ($$ \overline{2}01 $$) Heterojunctions