Valence-band Offset of P-Nio/n-zno Heterojunction Measured by X-ray Photoelectron Spectroscopy

Zhi-Guo Yang,Li-Ping Zhu,Yan-Min Guo,Wei Tian,Zhi-Zhen Ye,Bing-Hui Zhao

DOI: https://doi.org/10.1016/j.physleta.2011.03.021

IF: 2.707

2011-01-01

Physics Letters A

Abstract:X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (ΔEV) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (ΔEC) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment.