Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy

Chunfeng Cai,Huizhen Wu,JianXiao Si,WenHua Zhang,Yang Xu,Junfa Zhu

DOI: https://doi.org/10.1016/j.apsusc.2010.03.119

IF: 6.7

2010-01-01

Applied Surface Science

Abstract:The band offset at the interface of PbTe/Ge (100) heterojunction was studied by the synchrotron radiation photoelectron spectroscopy. A valence band offset of ΔEV=0.07±0.05eV, and a conduction band offset of ΔEC=0.27±0.05eV are concluded. The experimental determination of the band offset for the PbTe/Ge interface should be beneficial for the heterojunction to be applied in new optoelectronic and electronic devices.