In-Situ SRPES Study on the Band Alignment of (0001)cds/cdte Heterojunction

Gao Jun-Ning,Jie Wan-Qi,Yuan Yan-Yan,Zha Gang-Qiang,Xu Ling-Yan,Wu Heng,Wang Ya-Bin,Yu Hui,Zhu Jun-Fa

DOI: https://doi.org/10.1088/0256-307x/29/5/057301

2012-01-01

Abstract:The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset Delta E-V is calculated to be 0.65 eV and the conduction band offset Delta E-C is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.