Band alignment in CdS-α-Te van der Waals heterostructures for photocatalytic applications: Influence of biaxial strain and electric field

Tejaswini G,Anjana E Sudheer,Muthu Vallinayagam,Matthias Posselt,Matthias Zschornak,Maniprakash S,D. Murali

DOI: https://doi.org/10.1039/d4cp03368j

IF: 3.3

2024-11-14

Physical Chemistry Chemical Physics

Abstract:We present a comprehensive theoretical analysis of the structural and electronic properties of a van der Waals heterostructure composed of CdS and α-Te single layers (SLs). The investigation includes an in-depth study of fundamental structural, electronic, and optical properties with a focus on their implications for photocatalytic applications. The findings reveal that the α-Te SL significantly influences the electronic properties of the heterostructure. Specifically, the optical property of the heterostructure is notably dominated by the contribution of α-Te. The layer-resolved density of states analyses indicate that the valence and conduction bands near the Fermi level are mainly determined by the α-Te SL. Band edge analyses demonstrate a type-I band alignment in the heterostructure, causing charge carriers (electrons and holes) to localize within α-Te. The electronic properties can be further modulated by external strain and electric fields. Remarkably, the CdS-α-Te heterostructure undergoes a transition from type-I to type-II band alignment when subjected to an electric field, whereas mechanical strain does not affect the band alignment. This may be interesting for the application of the heterostructure for photocatalysis.

chemistry, physical,physics, atomic, molecular & chemical