Abstract:Narrow-gap semiconductor PbTe has exhibited versatility in both mid-infrared optoelelctronics and thermoelectrics. However, the absence of commercially obtainable PbTe crystal substrates limits its wide applications. In this paper, heteroepitaxy of high-quality PbTe crystal on GaAs(211) using CdTe/ZnTe buffers by molecular beam epitaxy is presented for the first time. Optimal growth parameters have been obtained by both in-situ and ex-situ characterizations. In-situ reflection high-energy electron diffraction observed a transition of growth mode from 2D to 3D, which is in agreement with the results of atomic force microscope and scanning electron microscope characterizations. High resolution X-ray diffraction revealed that the growth of PbTe crystal is along [531] direction which is different from the [211] substrate orientation. Multiple phonon modes related to PbTe were observed by Raman scattering while mid-infrared light emission from epitaxial PbTe is observed at a peak of 3.5μm by photoluminescence. Different from PbTe grown on BaF2(111), n-type conductivity with electron densities of ~5×1017cm−3 and mobilities of 675cm2/Vs at room temperature and 4300cm2/Vs at 2K is observed. The high quality PbTe grown on GaAs(211) substrates using CdTe/ZnTe buffers renders promising applications in both optoelectronics and thermoelectrics.

Band Gap Energies and Refractive Indices of Epitaxial Pb 1- X Sr X Te Thin Films

Microstructure and Optical Properties of Pb_(1-x)Sr_xSe Thin Films

Band Shift of Pb1-Xsrx Te Thin Film and Its Band Alignment Using Synchrotron Radiation Photoelectron Spectroscope

Optical Properties of Pb1-Xmnxse Thin Films

Electronic Band Structure of Epitaxial PbTe (111) Thin Films Observed by Angle-Resolved Photoemission Spectroscopy

Far-infrared reflection spectra of PbSrSe thin films grown by molecular beam epitaxy

Resonant Nature of Intrinsic Defect Energy Levels in Pbte Revealed by Infrared Photoreflectance Spectroscopy

Excitonic Line Broadening in Pbsrse Thin Films Grown by Molecular Beam Epitaxy

Band Gaps, Effective Masses and Refractive Indices of Pbsrse Thin Films: Key Properties for Mid-Infrared Optoelectronic Device Applications

Optical Properties of Srse Thin Films Grown by Molecular Beam Epitaxy

Temperature-dependent Optical Properties of Pb1−xMnxSe Films Epitaxially Grown on Zn0.04Cd0.96Te Substrates

Reconstructions and Stabilities of PbTe(1 1 1) Crystal Surface from Experiments and Density-Functional Theory

Abnormal Raman Spectra of PbTe Crystalline Thin Films Grown by Molecular Beam Epitaxy

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Microstructure and Optical Properties of Pb1-xGexTe Films

Topological Crystalline Insulator Pbxsn1-Xte Thin Films on Srtio3 (001) with Tunable Fermi Levels

Topological crystalline insulator Pb {sub x} Sn {sub 1-x} Te thin films on SrTiO {sub 3}(001) with tunable Fermi levels

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Optical Characterization Of Sr1-Xbaxbi4ti4o15 Graded Thin Films

Effect of Strain on the Lattice Vibrational Properties of PbSe

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)