Topological crystalline insulator Pb {sub x} Sn {sub 1-x} Te thin films on SrTiO {sub 3}(001) with tunable Fermi levels

Hua Guo,Jun-Wei Liu,Zhen-Yu Wang,Rui Wu,Shuai-Hua Ji,Wen-Hui Duan,Xi Chen,Qi-Kun Xue,Chen-Hui Yan,Zhi-Dong Zhang,Li-Li Wang,Ke He,Xu-Cun Ma
IF: 6.6351
2014-01-01
APL Materials
Abstract:In this letter, we report a systematic study of topological crystalline insulator Pb {sub x} Sn {sub 1-x} Te (0< x< 1) thin films grown by molecular beam epitaxy on SrTiO {sub 3}(001). Two domains of Pb {sub x} Sn {sub 1-x} Te thin films with intersecting angle of α≈ 45 were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb {sub x} Sn {sub 1-x} Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb {sub x} Sn {sub 1-x} Te thin films.
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