Microscopic Origin of Thep-Type Conductivity of the Topological Crystalline Insulator SnTe and the Effect of Pb Alloying

Na Wang,Damien West,Junwei Liu,Jia Li,Qimin Yan,Bing-Lin Gu,S. B. Zhang,Wenhui Duan
DOI: https://doi.org/10.1103/physrevb.89.045142
IF: 3.7
2014-01-01
Physical Review B
Abstract:The interest in SnTe has recently increased due to its topological crystalline insulator nature, despite the fact that SnTe is always heavily p type. Here, using first-principles calculations, we identify the microscopic origin of the p-type conductivity of SnTe. It is found that the negatively charged Sn vacancy (V-Sn(2-)) dominates the electronic properties of SnTe: regardless of the growth conditions, V-Sn(2-) always has a negative formation energy within the band gap, which forces the Fermi level below the valence band maximum (VBM), leading to degenerate p-type doping. In contrast, the deeper VBM of PbTe increases the formation energy of the Pb vacancy (V-Pb(2-)), allowing for either n-type or p-type PbTe. So even though standard n doping of SnTe is very difficult, alloying with Pb can achieve n doping by lowering the VBM, thereby inhibiting the formation of cation vacancy and, thus, probably producing a topological crystalline insulator with the Fermi level located near the Dirac point.
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