Abstract:Due to the intrinsically plentiful Sn vacancies, developing n-type SnTe thermoelectric materials is a big challenge. Herein, n-type SnTe thermoelectric materials with remarkable performance were successfully synthesized through suppressing Sn vacancies, followed by electron-doping. Pb alloying notably depressed the Sn vacancies via populating Sn vacancies in SnTe (supported by transmission electron microscopy), and the electrical transports were shifted from p-type to n-type through introducing electrons using I doping. In the n-type SnTe, we found that the electrical conductivity could be enhanced by increased carrier mobility through sharpening conduction bands after alloying Pb, while the lattice thermal conductivity could be reduced via strong phonon scattering after introducing defects by Pb alloying and I doping. Resulting from these enhancements, the n-type Sn0.6Pb0.4Te0.98I0.02 achieves a notably high ZTmax ∼ 0.8 at 573 K and a remarkable ZTave ∼ 0.51 at 300–823 K, which can match many excellent p-type SnTe. This work indicates that n-type SnTe could be experimentally acquired and is a promising candidate for thermoelectric generation, which will stimulate further research on n-type SnTe thermoelectric materials and even devices on the basis of both n- and p-type SnTe legs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/jacs.1c02346?goto=supporting-info">https://pubs.acs.org/doi/10.1021/jacs.1c02346</a>.Details of experiments with calculations, S versus content of Pb and I (573 K), powder XRD patterns with lattice parameters for Sn1–xPbxTe0.98I0.02 (x = 0.2–0.45) and Sn0.6Pb0.4Te1–yIy (y = 0–0.025), thermoelectric transport properties versus temperature for Sn1–xPbxTe1–yIy (x = 0.2–0.45, y = 0–0.025), experimental and theoretical sample density of all samples, sound velocity, elastic properties, phonon mean free path, and Grüneisen parameter of samples included in the study (<a class="ext-link" href="/doi/suppl/10.1021/jacs.1c02346/suppl_file/ja1c02346_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Avoiding Oxygen Induced Pb Vacancies for High Thermoelectric Performance of N-Type Bi-doped Pb1-xBixTe Compounds

Enhanced thermoelectric performance of n -type PbTe bulk materials fabricated by semisolid powder processing

Phase boundary mapping and suppressing Pb vacancies for enhanced thermoelectric properties in n-type Sb doped PbTe compounds

Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi 2 Te 3 -Based Compounds

Fine Tuning of Defects Enables High Carrier Mobility and Enhanced Thermoelectric Performance of N-Type PbTe

Zn-Induced Defect Complexity for the High Thermoelectric Performance of n-Type PbTe Compounds

Modulation of Vacancy Defects and Texture for High Performance N-Type Bi2 Te3 Via High Energy Refinement.

Achieving High-Performance N-Type PbTe Via Synergistically Optimizing Effective Mass and Carrier Concentration and Suppressing Lattice Thermal Conductivity

Enhancing n-type PbTe thermoelectric performance through Cd alloying and strategic defects management

Vacancy Manipulation by Ordered Mesoporous Induced Optimal Carrier Concentration and Low Lattice Thermal Conductivity in BixSb2- xTe3 Yielding Superior Thermoelectric Performance

Realizing N-type SnTe Thermoelectrics with Competitive Performance through Suppressing Sn Vacancies

Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder

Broadening temperature plateau of high zTs in PbTe doped Bi0·3Sb1·7Te3 through defect carrier regulation and multi-scale phonon scattering

Enhanced thermoelectric performance of PbTe based materials by Bi doping and introducing MgO nanoparticles

Modulation of Vacancy Defects and Texture for High Performance n‐Type Bi2Te3 via High Energy Refinement

Regulation of exciton for high thermoelectric performance in (Bi, Sb)2Te3 alloys via doping with Pb and multi-scale microstructure

High-performance in n-type PbTe-based thermoelectric materials achieved by synergistically dynamic doping and energy filtering

Unraveling the Origin of Donor‐Like Effect in Bismuth–Telluride‐Based Thermoelectric Materials

Decorated dislocations lead to dynamically optimized thermoelectric performance in N-type PbTe

Manipulating Pb Vacancies Achieved Ultra‐High Thermoelectrics in Quaternary Pb0.95Na0.04Te1‐xSex via Fine‐Tuning Se Solubility