Abstract:For n-type PbTe based compounds with relatively low optimal concentration (10(19) cm(-3)), the accompanied structural defects play pivotal role on the charge transport upon doping with alien valent atoms. Herein, we report that Oxygen has huge influence on the defect evolution and thermoelectric properties in n-type PbTe for the first time. A boosted thermoelectric figure of merit ZT of similar to 1.12 at 673 K and a ZT(ave) of 0.84 in the range of 300-873 K are achieved for vacuum sintered Bi-doped PbTe with the powders ground under the protection of Ar. This is in sharp contrast with the same Bi-doped PbTe material sintered with the powders ground in the air, which reaches a ZT(ave) of 0.52. This distinct thermoelectric properties in Bi-doped PbTe compounds are strongly correlated to Bi dopant, the vacancy defects (V-Pb '' and V-Te(center dot center dot)) induced during the fracturing process, and oxygen in the air. The coexistence of Bi dopant and oxygen lowers the formation energy of Pb vacancies and induces large number of O-Bi related Pb vacancies in the structure, yielding an acceptor-like effect. Such negatively charged Pb vacancies in the structure exert a strong long-range coulombic repulsion force on the electrons, leading to a low doping efficiency, a low carrier mobility (200 cm(2) V-1 s(-1)), and inferior electronic properties. Whereas, the protection provided by Ar effectively avoids the contamination by oxygen and prevents the formation of O-Bi related Pb vacancies, which appears remarkably effective in enhancing the electronic transport. A high carrier mobility of 1300 cm(2) V-1 s(-1) is attained in slightly doped Pb0.9995Bi0.0005Te sample and this contributes to an ultra-high power factor of 40 mu W cm(-1) K-2 for the Pb0.9995Bi0.0005Te sample at room temperature. The high PFave exceeds 25 mu W cm(-1) K-2 in the range of 300-723 K. The work provides a new insight into the formation mechanism of structural defects and a new avenue for suppressing the cation vacancies, resulting in higher performance of n-type PbTe-based compounds.

Manipulating Pb Vacancies Achieved Ultra‐High Thermoelectrics in Quaternary Pb0.95Na0.04Te1‐xSex via Fine‐Tuning Se Solubility

Promoted Na Solubility and Modified Band Structure for Achieving Exceptional Average ZT by Extra Mn Doping in PbTe.

Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Achieving High-Performance N-Type PbTe Via Synergistically Optimizing Effective Mass and Carrier Concentration and Suppressing Lattice Thermal Conductivity

Phase boundary mapping and suppressing Pb vacancies for enhanced thermoelectric properties in n-type Sb doped PbTe compounds

Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Enhanced thermoelectric performance of PbTe bulk materials with figure of merit zT >2 by multi-functional alloying

Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Avoiding Oxygen Induced Pb Vacancies for High Thermoelectric Performance of N-Type Bi-doped Pb1-xBixTe Compounds

Improved Solubility in Metavalently Bonded Solid Leads to Band Alignment, Ultralow Thermal Conductivity, and High Thermoelectric Performance in SnTe

Optimizing the thermoelectric performance of n-type PbSe through dynamic doping driven by entropy engineering

Integrating Band Structure Engineering with All‐Scale Hierarchical Structuring for High Thermoelectric Performance in PbTe System

Bridging the miscibility gap towards higher thermoelectric performance of PbS

Preparation of Heavily Doped P-Type PbSe with High Thermoelectric Performance by the NaCl Salt-Assisted Approach

Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in N‐type PbSe Rivalling PbTe

Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS

Fine Tuning of Defects Enables High Carrier Mobility and Enhanced Thermoelectric Performance of N-Type PbTe

Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Engineering atomic-level crystal lattice and electronic band structure for extraordinarily high average thermoelectric figure of merit in n-type PbSe

Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder