Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Y. Shi,Y. Tang,K. Liu,S. Zhong,S. Chen,L. Yu,J. Wu,Q. Zhang,X. Su,X. Tang
DOI: https://doi.org/10.1016/j.mtphys.2022.100766
IF: 11.021
2022-01-01
Materials Today Physics
Abstract:It has been found that the doped Ga has a distinct role in PbTe and PbSe compounds though they possess the same crystal structure. Therefore, to understand how the thermoelectric performance evolves in the Ga-doped PbTe1-xSex solid solution is crucial. Herein, we report that a maximum ZT value of 1.57 at 721 K and a high average ZT value of 1.13 in the temperature range of 300-843 K are attained for Pb0.98Ga0.02Te0.96Se0.04 compound. The experimental studies show that doping Ga into PbTe introduces a shallow level impurity state Ga3+ and a deep level associated with the Ga+ state simultaneously. Interestingly, upon Se-alloying all of the Ga+ are oxidized into Ga3+ at low temperatures, which increases the room-temperature carrier concentration from 1.16 x 10(19) cm(-3) to 2.17 x 10(19) cm(-3). This leads to an improved power factor of 3.04 mW m(-1) K-2 for Pb0.98Ga0.02Te0.96Se0.04 sample at 482 K. Additionally, Se-alloying further enhances the point defect phonon scattering and lowers the lattice thermal conductivity to 0.46 W m(-1) K-1 for Pb0.98Ga0.02Te0.96Se0.04 sample at 690 K. As a result, the ZT value is increased by about 112% compared with the maximum ZT of 0.74 for pristine PbTe. This work provides a new avenue for tuning the doping behavior of cation site dopant via alloying on anion site to further improve the ZT value in thermoelectric materials.
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