Weak Electron–Phonon Coupling and Enhanced Thermoelectric Performance in N‐type PbTe–Cu2Se Via Dynamic Phase Conversion

Ming Wu,Hong-Hua Cui,Songting Cai,Shiqiang Hao,Yukun Liu,Trevor P. Bailey,Yinying Zhang,Zixuan Chen,Yubo Luo,Ctirad Uher,Christopher Wolverton,Vinayak P. Dravid,Yan Yu,Zhong-Zhen Luo,Zhigang Zou,Qingyu Yan,Mercouri G. Kanatzidis
DOI: https://doi.org/10.1002/aenm.202203325
IF: 27.8
2023-01-01
Advanced Energy Materials
Abstract:This study investigates Ga-doped n-type PbTe thermoelectric materials and the dynamic phase conversion process of the second phases via Cu2Se alloying. Introducing Cu2Se enhances its electrical transport properties while reducing its lattice thermal conductivity (kappa(lat)) via weak electron-phonon coupling. Cu2Te and CuGa(Te/Se)(2) (tetragonal phase) nanocrystals precipitate during the alloying process, resulting in Te vacancies and interstitial Cu in the PbTe matrix. At room temperature, Te vacancies and interstitial Cu atoms serve as n-type dopants, increasing the carrier concentration and electrical conductivity from approximate to 1.18 x 10(19) cm(-3) and approximate to 1870 S cm(-1) to approximate to 2.26 x 10(19) cm(-3) and approximate to 3029 S cm(-1), respectively. With increasing temperature, the sample exhibits a dynamic change in Cu2Te content and the generation of a new phase of CuGa(Te/Se)(2) (cubic phase), strengthening the phonon scattering and obtaining an ultralow kappa(lat). Pb0.975Ga0.025Te-3%CuSe exhibits a maximum figure of merit of approximate to 1.63 at 823 K, making it promising for intermediate-temperature device applications.
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