Abstract:This study presents a colloidal synthesis method to produce thermoelectric Cu3SbSe4 nanocrystals with high yield. Pb doping is employed to increase carrier concentration and effective mass, confirmed by experimental studies and theoretical calculations. Additionally, lattice distortions and other intriguing nanostructures are found to significantly reduce thermal conductivity. Consequently, the thermoelectric figure of merit zT is greatly enhanced. Developing cost‐effective and high‐performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3SbSe4 is a promising p‐type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution‐based approach is developed to synthesize high‐quality Cu3SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax) ≈ 0.85 at 653 K is obtained in Cu3Sb0.97Pb0.03Se4. This represents a 1.6‐fold increase compared to the undoped sample and exceeds most doped Cu3SbSe4‐based materials produced by solid‐state, demonstrating advantages of versatility and cost‐effectiveness using a solution‐based technology.

Enhancement of thermoelectric performance of Cu 1.98 Se by Pb doping

Enhancement of low-temperature thermoelectric performance via Pb doping in Cu3SbSe4

Defect Chemistry Engineering Promotes the Dopability of Cu for an Extraordinary Thermoelectric Performance of Hole-Doped PbSe with Resonant States

Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying

Complex lattice occupation of copper leading to enhanced thermoelectric performance in n-type PbSe

Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Enhancing Thermoelectric Performance of p-Type PbSe through Suppressing Electronic Thermal Transports

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 Via Cd-Doping

High thermoelectric performance and low thermal conductivity in Cu 2- x Na x Se bulk materials with micro-pores

Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Enhancing the Thermoelectric Performance of Cu2se Via Ag Doping

Enhanced Thermoelectric Performance of PbSe Co-Doped with Ag and Sb

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe 2 via Cd-Doping

Synergistically Optimized Electron and Phonon Transport of Polycrystalline BiCuSeO via Pb and Yb Co-Doping

Optimizing the thermoelectric performance of n-type PbSe through dynamic doping driven by entropy engineering

Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS

Enhanced Average Power Factor and ZT Value in PbSe Thermoelectric Material with Dual Interstitial Doping

Preparation and Enhanced Thermoelectric Performance of Pb-doped Tetrahedrite Cu12-xPbxSb4S13

Synergistically Optimizing Electrical and Thermal Transport Properties of N-Type PbSe

Thermoelectric Transport Properties of PbTe-based Composites Incorporated with Cu2Se Nano-Inclusions

Thermoelectric Properties of BiCuSO Doped with Pb