Abstract:Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1−xBixSe4 (x = 0–0.04) samples were fabricated through melting and hot pressing process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2−xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWm−1 K−2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm−1 K−1 and thermal conductivity (κtot) of ~ 0.62 Wm−1 K−1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times higher than that of pristine Cu3SbSe4. This work shows that isovalent heavy element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.

Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying

Thermoelectric Properties of BiCuSO Doped with Pb

Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

Enhancement of the Thermoelectric Properties of BiCuSeO Via in Doping and Powder Size Controlling

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu 1.8 S via Carrier Concentration Regulation and Multiscale Phonon Scattering

Enhancement of thermoelectric performance of Cu 1.98 Se by Pb doping

Synergistically optimized electron and phonon transport of p-type BiCuSeO oxyselenides via Pb dopant and Te composite

Synergistically Optimized Electron and Phonon Transport of Polycrystalline BiCuSeO via Pb and Yb Co-Doping

Enhancement of low-temperature thermoelectric performance via Pb doping in Cu3SbSe4

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 Via Cd-Doping

Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

Realizing synergistic optimization of electrical and thermal transport properties in BiCuSeO ceramics via multi-element doping

Enhanced Thermoelectric Properties in Bicuseo Oxyselenides Via Zn and S Dual-Site Substitution

Synergistically Optimizing Electrical and Thermal Transport Properties of BiCuSeO Via a Dual‐Doping Approach

High thermoelectric performance of oxyselenides: intrinsically low thermal conductivity of Ca-doped BiCuSeO

Unlocking the Potential of Cu3SbSe3: Ultralow Thermal Conductivity and Enhanced Thermoelectric Performance

Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

Complex lattice occupation of copper leading to enhanced thermoelectric performance in n-type PbSe

Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO