Abstract:Many efforts are recently devoted on improving thermoelectric SnTe as an environment—friendly alternative to conventional PbTe and successful approaches include valence band convergence, nanostructuring, and substantial/interstitial defects. Among these strategies, alloying SnTe with MnTe enables the most effective reduction in the valence band offset (between L and Σ) for a convergence due to its high solubility of ≈15%, yet there is no indication that the solubility of MnTe is high enough for fully optimizing the valence band structure and thus for maximizing the electronic performance. Here, a strategy is shown to increase the MnTe solubility up to ≈25% by alloying with 5% GeTe, which successfully locates the composition (20% MnTe) to optimize the valence band structure by converging a more degenerated Λ (as compared with band L) and Σ valence bands. Through a further alloying with Cu2Te, the resultant Cu‐interstitial defects enable a sufficient reduction in lattice thermal conductivity to its amorphous limit (0.4 W m−1 K−1). These electronic and thermal effects successfully realize a record‐high thermoelectric figure of merit, zT of 1.8, strongly competing with that of PbTe. This work demonstrates the validity of band manipulation and interstitial defects for realizing extraordinary thermoelectric performance in SnTe. GeTe is found to be an effective promoter for increasing the solubility of MnTe in SnTe, which leads to well‐converged valence bands for improving the thermoelectric performance. A further Cu2Te‐alloying reduces the lattice thermal conductivity to its amorphous limit and the combination of both electronic and thermal strategies realizes a record zT of 1.8 in SnTe.

Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Enhancing Thermoelectric Performance of SnTe Via Stepwisely Optimizing Electrical and Thermal Transport Properties

Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in N-Pbte0.75se0.25

Promoting SnTe As an Eco‐Friendly Solution for P‐pbte Thermoelectric Via Band Convergence and Interstitial Defects

Realizing high doping efficiency and thermoelectric performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation

Band Manipulation for High Thermoelectric Performance in SnTe Through Heavy CdSe-alloying

Heavy Doping by Bromine to Improve the Thermoelectric Properties of N‐type Polycrystalline SnSe

Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe

Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Band Engineering and Precipitation Enhance Thermoelectric Performance of SnTe with Zn-doping

Interplay between metavalent bonds and dopant orbitals enables the design of SnTe thermoelectrics

Synergistic band modulation and precipitates: Achieving high quality factor in SnTe

Thermoelectric Performance of Se/Cd Co-doped SnTe via Microwave Solvothermal Method.

Solute Manipulation Enabled Band and Defect Engineering for Thermoelectric Enhancements of SnTe

Enhancing Thermoelectric Performance of SnTe Via Nanostructuring Particle Size

Promoted Na Solubility and Modified Band Structure for Achieving Exceptional Average ZT by Extra Mn Doping in PbTe.

Modification Of Bulk Heterojunction And Ci Doping For High-Performance Thermoelectric Snse2/Snse Nanocomposites

Manipulating Pb Vacancies Achieved Ultra‐High Thermoelectrics in Quaternary Pb0.95Na0.04Te1‐xSex via Fine‐Tuning Se Solubility

High Thermoelectric Performance of SnTe Via in Doping and Cu1.75Se Nanostructuring Approach

A Simple Pb-doping to Achieve Bonding Evolution,vsn and Resonant Level Shifting for Regulating Thermoelectric Transport Behavior of SnTe