Abstract:Bismuth telluride-based alloys are the best performing thermoelectric materials near room temperature. Grain size refinement and nanostructuring are the core stratagems for improving thermoelectric and mechanical properties. However, the donor-like effect induced by grain size refinement strongly restricts the thermoelectric properties especially in the vicinity of room temperature. In this study, the formation mechanism for the donor-like effect in Bi2Te3-based compounds was revealed by synthesizing five batches of polycrystalline samples. We demonstrate that the donor-like effect in Bi2Te3-based compounds is strongly related to the vacancy defects (VBi‴ and VTe···) induced by the fracturing process and oxygen in air for the first time. The oxygen-induced donor-like effect dramatically increases the carrier concentration from 2.5 × 1019 cm-3 for the zone melting ingot and bulks sintered with powders ground under an inert atmosphere to 7.5 × 1019 cm-3, which is largely beyond the optimum carrier concentration and seriously deteriorates the thermoelectric performance. Moreover, it is found that both avoiding exposure to air and eliminating the thermal vacancy defects (VBi‴ and VTe···) via heat treatment before exposure to air can effectively remove the donor-like effect, producing almost the same carrier concentration and Seebeck coefficient as those of the zone melting ingot for these samples. Therefore, a defect equation of oxygen-induced donor-like effect was proposed and was further explicitly corroborated by positron annihilation measurement. With the removal of donor-like effect and improved texturing via multiple hot deformation (HD) processes, a maximum power factor of 3.5 mW m-1 K-2 and a reproducible maximum ZT value of 1.01 near room temperature are achieved. This newly proposed defect equation of the oxygen-induced donor-like effect will provide a guideline for developing higher-performance V2VI3 polycrystalline materials for near-room-temperature applications.

Modulation of Vacancy Defects and Texture for High Performance n‐Type Bi2Te3 via High Energy Refinement

Modulation of Vacancy Defects and Texture for High Performance N-Type Bi2 Te3 Via High Energy Refinement.

Enhancing the Thermoelectric and Mechanical Properties of Bi 0.5 Sb 1.5 Te 3 Modulated by the Texture and Dense Dislocation Networks

Grain Recovery Facilitated Low-Angle Grain Boundaries and Texture for High-Performance Bisbte Alloys

High-performance near-room-temperature n-type Bi2Te3-based thermoelectric alloys with superior mechanical properties

Realizing High-Efficiency Thermoelectric Module by Suppressing Donor-Like Effect and Improving Preferred Orientation in N-Type Bi2(Te, Se)3

Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi 2 Te 3 -Based Compounds

Critical Role of Tellurium Self-Compensation in Enhancing the Thermoelectric Performance of P-Type Bi0.4Sb1.6Te3 Alloy

Attaining Ultrahigh Thermoelectric Performance of Direction-Solidified Bulk N-Type Bi2Te2.4Se0.6 Via Its Liquid State Treatment

Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi2Te3‐Based Thermoelectric Devices

High thermoelectric and mechanical performance in strong-textured n-type Bi2Te2.7Se0.3 by temperature gradient method

Suppressing the donor-like effect via fast extrusion engineering for high thermoelectric performance of polycrystalline Bi2Te2.79Se0.21

Design of N‐Type Textured Bi2Te3 with Robust Mechanical Properties for Thermoelectric Micro‐Refrigeration Application

Enhanced electrical and mechanical properties of Bi2Te3-based thermoelectric thick films enabled by a practical dynamic regulation strategy

Achieving High Thermoelectric Performance of n-Type Bi 2 Te 2.79 Se 0.21 Sintered Materials by Hot-Stacked Deformation

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Mediating Point Defects Endows N-Type Bi2 Te3 with High Thermoelectric Performance and Superior Mechanical Robustness for Power Generation Application.

Enhanced Thermoelectric Performance in N-Type Bi2Te3-Based Alloys Via Suppressing Intrinsic Excitation.

Multi-scale hierarchical microstructure modulation towards high room temperature thermoelectric performance in <i>n</i>-type Bi<sub>2</sub>Te<sub>3</sub>-based alloys

Enhanced Thermoelectric Performance of N-Type Bi2(Se, Te)3 Bulk Nanocomposites Through Ti Doping

Boron-Mediated Grain Boundary Engineering Enables Simultaneous Improvement of Thermoelectric and Mechanical Properties in N-Type Bi<sub>2</sub>Te<sub>3</sub>