Abstract:Topological crystalline insulator (TCI) is a recently-discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular beam epitaxy to grow 12 double layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is ~ 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (~1/4 h/e2). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

ARPES Study of the Epitaxially Grown Topological Crystalline Insulator SnTe(111)

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Breaking crystalline symmetry of epitaxial SnTe films by strain

Synthesis and characterisation of nanomaterials of the topological crystalline insulator SnTe

Topological crystalline insulator Pb {sub x} Sn {sub 1-x} Te thin films on SrTiO {sub 3}(001) with tunable Fermi levels

Topological Crystalline Insulator Pbxsn1-Xte Thin Films on Srtio3 (001) with Tunable Fermi Levels

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Films

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio

Broadband High-Responsivity Photodetectors Based on Large-Scale Topological Crystalline Insulator SnTe Ultrathin Film Grown by Molecular Beam Epitaxy

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Study of Growth of [111]-Oriented CdTe Thin Films by MBE