Abstract:Alloys of Bi2Te3 and Sb2Te3 [(Bi1-xSbx)(2)Te-3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb: Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb)(2)Te-3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x similar to 0.7, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x similar to 0.7 sample shows great similarity to pristine Bi2Te3. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (Bi1-xSbx)(2)Te-3.

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Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Transport Properties of Sb2te3/Bi2te3 Topological Insulator Heterostructures

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Electrical Detection of Spin-Polarized Surface States Conduction in (bi(0.53)sb(0.47))2te3 Topological Insulator.

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Surface-bulk Coupling in a Bi2Te3 Nanoplate Grown by Van Der Waals Epitaxy.

Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe$_2$ Ultrathin Films

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe2 Ultrathin Films

Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Gate-tunable multiband transport in ZrTe5 thin devices

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films