Abstract:PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elements such as Sr and Eu can substitute Pb to widen the bandgap of PbSe in heterostructure devices, but they come with challenges such as deteriorating optical and electronic properties, even in dilute concentrations due to their dissimilar atomic nature. We substitute Pb instead with column-IV Ge and assess the potential of rocksalt phase PbGeSe as a wider bandgap semiconductor in thin films grown by molecular beam epitaxy on GaAs substrates. Low sticking of GeSe adatoms requires synthesis temperatures below 260 °C to incorporate Ge, but this yields poor structural and compositional uniformity as determined by X-ray diffraction. Consequently, as-grown films in the range Pb0.94Ge0.06Se to Pb0.83Ge0.17Se (6-17% Ge) show much less bandgap widening in photoluminescence than prior work on bulk crystals using absorption. We observe that post-growth rapid thermal annealing at temperatures of 375-450 °C improves the crystal quality and recovers bandgap widening. Rapid interdiffusion of Ge during annealing, however, remains a challenge in harnessing such PbGeSe materials for compositionally sharp heterostructures. Annealed 17%-Ge films emit light at 3-3.1 um with minimal shift in wavelength versus temperature. These samples are wider in bandgap than PbSe films by 55 meV at room temperature and the widening increases to 160 meV at 80 K, thanks to sharply different dependence of bandgap on temperature in PbSe and PbGeSe.

Excitonic Line Broadening in Pbsrse Thin Films Grown by Molecular Beam Epitaxy

Spectroscopic Line Shape Broadening Mechanisms In Pbse/Pbsrse Quantum Wells

Microstructure and Optical Properties of Pb_(1-x)Sr_xSe Thin Films

Band Gaps, Effective Masses and Refractive Indices of Pbsrse Thin Films: Key Properties for Mid-Infrared Optoelectronic Device Applications

Optical Properties of Srse Thin Films Grown by Molecular Beam Epitaxy

Far-infrared reflection spectra of PbSrSe thin films grown by molecular beam epitaxy

Effect of Strain on the Lattice Vibrational Properties of PbSe

Optical Properties of Pb1-Xmnxse Thin Films

Band Gap Energies and Refractive Indices of Epitaxial Pb 1- X Sr X Te Thin Films

Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Mobility and Phonon Scattering in Epitaxial PbSe Films

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Temperature-dependent Optical Properties of Pb1−xMnxSe Films Epitaxially Grown on Zn0.04Cd0.96Te Substrates

Hole Transport and Phonon Scattering in Epitaxial Pbse Films

Abnormal Raman Spectra of PbTe Crystalline Thin Films Grown by Molecular Beam Epitaxy

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

Band Shift of Pb1-Xsrx Te Thin Film and Its Band Alignment Using Synchrotron Radiation Photoelectron Spectroscope

Photoelectric properties of PbSe/BaF2/CaF2 films on Si (lll)