Abstract:Over the past few decades, lead selenide (PbSe) thin films have been widely utilized in infrared photonic devices owing to their narrow band gap, large exciton Bohr radius, high carrier mobility and large dielectric constant. The doping of PbSe thin films has presented an intriguing possibility for tuning their band gap and absorption spectrum range. In this study, we present a "one-step" synthesis of calcium-doped PbSe thin films using the chemical bath deposition method, aiming to address the challenges associated with complex processes and expensive elements. We investigate the effects of dopant concentration on the crystal structure, optical properties, and photoelectric properties. At a dopant concentration of 5 mmol/L, the preferred (200) peak shifts towards higher angle direction. Upon sensitization with iodine, an iodine-rich PbI 2 phase forms on the top layer of the film, leading to increased barrier heights and efficient electron trapping within the PbI 2 /PbSe structure. Furthermore, we study the resistance as a function of illumination duration in pristine PbSe, PbSe-Ca and PbSe-Ca-I. Our results show that the resistance change rate of PbSe-Ca is 8%, double that of the pristine PbSe. After sensitization, the resistance change rate increases to 13.82–10.6%, which is 4 times higher than that of the pristine PbSe. These findings demonstrate that Ca-doping combined with iodine sensitization can significantly enhance the photoelectric performance of PbSe thin films. This work presents a new opportunity for the application of lead chalcogenides in optoelectronic devices, which undoubtedly generate substantial interest in fundamental investigations of these materials.

Photoelectric properties of PbSe/BaF2/CaF2 films on Si (lll)

Photoelectric Properties Of Pbse/Baf2/Caf2 Films On Si(111)

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Microstructure and Optical Properties of Pb_(1-x)Sr_xSe Thin Films

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Optical Properties of Pb1-Xmnxse Thin Films

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

Far-infrared reflection spectra of PbSrSe thin films grown by molecular beam epitaxy

Molecular Beam Epitaxy of Periodic BaF2 /pbeuse Layers on Si(111)

Research Progress of Semiconductor PbSe Thin Films

Excitonic Line Broadening in Pbsrse Thin Films Grown by Molecular Beam Epitaxy

Progress of Iv-Vi Semiconductor Research in China

One-pot synthesis, sensitization and photoelectric performance of calcium doped PbSe thin films

Mobility and Phonon Scattering in Epitaxial PbSe Films

Optical Properties of Srse Thin Films Grown by Molecular Beam Epitaxy

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Band Gaps, Effective Masses and Refractive Indices of Pbsrse Thin Films: Key Properties for Mid-Infrared Optoelectronic Device Applications

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared

Effect of Strain on the Lattice Vibrational Properties of PbSe