Abstract:PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elements such as Sr and Eu can substitute Pb to widen the bandgap of PbSe in heterostructure devices, but they come with challenges such as deteriorating optical and electronic properties, even in dilute concentrations due to their dissimilar atomic nature. We substitute Pb instead with column-IV Ge and assess the potential of rocksalt phase PbGeSe as a wider bandgap semiconductor in thin films grown by molecular beam epitaxy on GaAs substrates. Low sticking of GeSe adatoms requires synthesis temperatures below 260 °C to incorporate Ge, but this yields poor structural and compositional uniformity as determined by X-ray diffraction. Consequently, as-grown films in the range Pb0.94Ge0.06Se to Pb0.83Ge0.17Se (6-17% Ge) show much less bandgap widening in photoluminescence than prior work on bulk crystals using absorption. We observe that post-growth rapid thermal annealing at temperatures of 375-450 °C improves the crystal quality and recovers bandgap widening. Rapid interdiffusion of Ge during annealing, however, remains a challenge in harnessing such PbGeSe materials for compositionally sharp heterostructures. Annealed 17%-Ge films emit light at 3-3.1 um with minimal shift in wavelength versus temperature. These samples are wider in bandgap than PbSe films by 55 meV at room temperature and the widening increases to 160 meV at 80 K, thanks to sharply different dependence of bandgap on temperature in PbSe and PbGeSe.

Progress of Iv-Vi Semiconductor Research in China

Synthesis of nanocrystalline lead chalcogenides PbE (E = S, Se, or Te) from alkaline aqueous solutions

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Microstructure and Optical Properties of Pb_(1-x)Sr_xSe Thin Films

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared

Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Observation of triangle pits in PbSe grown by molecular beam epitaxy

Photoelectric properties of PbSe/BaF2/CaF2 films on Si (lll)

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Spectroscopic Line Shape Broadening Mechanisms In Pbse/Pbsrse Quantum Wells

Hydrothermal synthesis of PbSe, PbTe semiconductor nanocrystals

Synthesis Of 3-D Hierarchical Dendrites Of Lead Chalcogenides In Large Scale Via Microwave-Assistant Method

Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and In 2 Se 3 and efficient photodetectors

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films.