Abstract:Here we present the growth of molecular beam epitaxy (MBE) CsPbBr 3 perovskite films in the orthorhombic crystal structure, with unique structural and morphological properties. CsPbBr 3 MBE perovskite films, with thickness ranging from a few nm to 300 nm, were grown in ultra-high vacuum on a Si(111)7 × 7 reconstructed surface, and after the formation of about 2 nm of SiO 2 , obtained exposing the clean reconstructed Si surface to molecular oxygen that serves to decouple the film from substrate. X-ray diffraction, and electron microscopies, such as scanning electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements showed remarkable structural, as well as morphological features, indicating extremely high crystallinity over a large area and across the bulk of the perovskite film. Through the X-ray diffraction patterns we found very narrow (002) and (110) reflections of CsPbBr 3 in pure orthorhombic phase, exhibiting a full width at half maximum of only 0.035°, value similar to a bulk Si single crystals, and a surface morphology composed of flat areas up to micrometres in lateral size. Our results shed new light both on preparation of high crystal quality perovskite films, and on the intrinsic properties of this striking fully-inorganic materials, which are exploitable for potential applications in electronic/optoelectronic devices and next generation photovoltaic solar cells.

Molecular Beam Epitaxy of Periodic BaF2 /pbeuse Layers on Si(111)

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Photoelectric Properties Of Pbse/Baf2/Caf2 Films On Si(111)

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Photoelectric properties of PbSe/BaF2/CaF2 films on Si (lll)

Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Ba0.9sr0.1tio3-Based Bragg Reflectors Fabricated from One Single Chemical Solution

Far-infrared reflection spectra of PbSrSe thin films grown by molecular beam epitaxy

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Abnormal Raman Spectra of PbTe Crystalline Thin Films Grown by Molecular Beam Epitaxy

The role of SiO2 buffer layer in the molecular beam epitaxy growth of CsPbBr3 perovskite on Si(111)

Optical Properties of Srse Thin Films Grown by Molecular Beam Epitaxy

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Progress of Iv-Vi Semiconductor Research in China

High Quality Ultrathin Bi2Se3 Films on CaF2 and CaF2/Si by Molecular Beam Epitaxy with a Radio Frequency Cracker Cell

Growth of A Periodic Inp-Based Heteroepitaxial Structure for A Quantum Cascade Laser

Observation of triangle pits in PbSe grown by molecular beam epitaxy