Abstract:InP-based lattice-matched and strain-compensated InGaAs/InAlAs superlattices of quantum cascade laser (QCL) structures were grown by metal-organic chemical vapour deposition (MOCVD). In this work, a very slow growth rate of ~0.1nm/s was used for the epitaxy of InGaAs/InAlAs superlattice (SL) structures, which allows fine control over layer thickness. Changing the interruption time (1.5s, 3s, 6s) between each layer of the SL structure showed little difference compared with the one with no interruption delay during the growth. Different from the lattice-matched InGaAs/InAlAs SL structure, the results showed that growth temperature played an important role in improving crystal quality and surface morphology for the strain-compensated SL structure. By reducing the growth temperature (from 680 °C to 640 °C at intervals of 20 °C) the defects density of the strain-compensated SLs gradually decreased, until the temperature fell below a certain value (620 °C) the overall quality started to degrade. The optimized growth parameters led to a near defect-free epi-wafer for the strain-compensated SL structure, which was very close to the ones of latticed-matched SL structure. The high-resolution transmission electron microscope (HRTEM) images indicated an absence of dislocations and good material quality and uniformity for the strain-compensated InGaAs/InAlAs layers, the interfaces were clear and straight. The high resolution X-ray diffraction (HRXRD) was employed for the measurement of composition and growth rate of SL layers.

Growth of A Periodic Inp-Based Heteroepitaxial Structure for A Quantum Cascade Laser

MBE growth and optimization of the InGaAs/InAlAs materials system for quantum cascade laser

Heteroepitaxial Growth of Inp/Gaas(100) by Metalorganic Chemical Vapor Deposition

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Investigation of InGaAs/InAlAs superlattices for quantum cascade laser structures grown by MOCVD

Growth of II-VI/III-V Heterovalent Quantum Structures

Optimization of GaAs (110) quantum well material growth technology by reflection high energy electron diffraction

Ingaasp/Gaas Schsqw Laser Arrays Grown By Lpe

Growth Studies of Quantum Cascade Lasers with Current-Blocking Structures

MOCVD GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As QUANTUM HETEROSTRUCTURES

Heteroepitaxy of InP on GaAs substrates using metamorphic buffers and strained Layer Superlattice

One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36Μm

Integrated Fabrication Of A High Strain Ingaas/Gaas Quantum Well Structure Under Variable Temperature And Improvement Of Properties Using Mocvd Technology

Metamorphic Growth of 1.55 Μm InGaAs/InGaAsP Multiple Quantum Wells Laser Structures on GaAs Substrates

Fabrication and Performance of In0.66ga0.34as0.73p0.27/In0.89ga0.11as0.23p0.77 Multiple-Quantum-Well Lasers

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

Direct Growth of GaAs-based Long-wavelength (1.55μm) InGaAs/InGaAsP Multiple Quantum Wells Laser

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Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy