Abstract:High-performance 1.06-μm InGaAs/GaAs double-quantum-well (DQW) asymmetric herero- structure semiconductor lasers have been designed, fabricated and characterized. The laser structure, grown by metal-organic chemical vapor deposition (MOCVD), mainly consists of compositionally graded p-AlxGa1−xAs upper cladding layers, a p-AlxGa1−xAs upper waveguide layer, a 1.06-μm InGaAs/GaAs DQW active region, an un-doped In1−xGaxAsyP1−y lower waveguide layer, and compositionally graded n-doped In1−xGaxAsyP1−y lower cladding layers. Measurement results of the as-cleaved ridge waveguide (RWG) lasers with a contact ridge width of 25 μm and different cavity lengths (900 to 2765 μm) demonstrated state-of-the-art performances with a high internal quantum efficiency (ηi) of ∼98.4% and a low internal optical loss (αi) of ∼1.01 cm−1 at 20 °C. The laser has demonstrated high characteristic temperatures of 245 K (T0) and 663 K (T1) from 20 to 50 °C, and the cavity length dependent behaviour of T0 and T1 has also been investigated from 20 to 80 °C. Furthermore, a low transparency current density (Jtr) of 77 A/cm2/QW in this laser structure is obtained at 20 °C, which is among one of the lowest values reported so far for 1.06-μm InGaAs/GaAs semiconductor lasers.

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

GaAs/AlGaAs quantum cascade lasers

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

High-performance 1.06-Μm InGaAs/GaAs Double-Quantum-well Semiconductor Lasers with Asymmetric Heterostructure Layers

Single-mode, surface-emitting quantum cascade laser at 26 μ m

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance

Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser under High Current Via a Grating Reflector