Abstract:The solid-source molecular beam epitaxy (SSMBE) technology using valved cracker cells is one of the most promising techniques for epitaxial growth of high-quality phosphorus-containing compound semiconductors. This novel technology is transplanted successfully onto a homemade MBE system and is studied roundly. The growth of 1.55-mum-wavelength-range strained and strain-compensated InAsP multiple quantum well (MQW) structures are investigated. A low growth temperature or large V/III flux ratio is found to be favorable for attaining a high structural quality of highly strained MQW structures, and the growth temperature has a critical effect on the sample's optical property. It is also found that an intermediate InP layer of several monolayers, which is inserted between the well and the barrier, is necessary to improve the quality of strain-compensated MQW structures. The measured photoluminescence (PL) full-width at half-maximum (FWHM) of 18.7 meV and 17.2 meV for stained and strain-compensated MQW at room temperature are amon the best reported to date for 1.55-mum-wavelength MQW laser structures. Finally, broad-area (BA) separate confinement heterostructure (SCH) MQW lasers are fabricated, and the threshold current density is measured to be 1.4 kA/cm(2). This is the first report, to the-best of the authors' knowledge, on a 1.55-mum-wavelength-range strained InAsP/InGaAsP MQW laser structure grown by SSMBE.

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

1.55 Μm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

1.55 Μm Wavelength InAsP/InGaAsP Multiple Quantum Well Laser Based Upon Solid Source Molecular Beam Epitaxy

Molecular Beam Epitaxy Growth and Photoluminescence Study of Room Temperature 1.31μm (inyga1−yas/gaas1−x Sbx)/GaAs Bilayer Quantum Wells

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

High-performance 1.32-Μm GaInNAs/GaAs Single-Quantum-well Lasers Grown by Molecular Beam Epitaxy

All-Solid-Source Molecular Beam Epitaxy: Technology and Applications

High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

Annealing Effect of the InAs Dot-in-well Structure Grown by MBE

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

High T 0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source

Metamorphic Growth of 1.55 Μm InGaAs/InGaAsP Multiple Quantum Wells Laser Structures on GaAs Substrates

AlInGaAs/AlGaAs Strained Material and Strained Quantum Well Lasers Grown by MBE

Optimization of InGaAsP–InP Tensile Strained Multiple Quantum-Well Structures Emitting at 1.34 Μm

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy