Abstract:Many efforts have been made to seek structures grown on GaAs substrate with long emission wavelength for telecommunication, among which GaAsSb/GaInAs bilayer quantum wells embedded into GaAs layers provide a promising structure for realizing 1 300 nm emission. It has been pointed out that the GaAsSb/GaInAs conduction band alignment is of type-Ⅱ, with electrons confined in GaInAs layer whereas holes confined in GaAsSb layer.The relative strong ground state transition has been observed in photoluminescence (PL) spectra.However, the physical aspects of the bilayer quantum well (QW) structure were still not very well studied. For example, the experimental verification of band alignment between GaInAs and GaAsSb and the overlap integral of type-Ⅱ transitions were not well provided. The behavior of excited states transitions was reported, but had never been investigated by PL spectra, which is studied in this paper. The optical transitions in GaAsSb/GaInAs/GaAs bilayer quantum wells (QWs) are studied by photo-(luminescence) (PL) and photoreflectance (PR) measurements. Two PL peaks with large energy separation (120 meV) are observed at 300 K, while at 10 K only the one at lower energy is observed. Further studies show that the PL peak with higher energy appears only at the temperatures above 150 K. The physical mechanisms of the two PL peaks have been identified to be different. The lower PL peak and the higher one belong to type-Ⅱ and type-Ⅰ-like transition, respectively. An optical transition model is formed and the wave functions overlap integrals of electrons and holes are calculated. The methods to enhance the lowest interband (optical) transitions of the QW are suggested based on the growth conditions of the studied samples.

Molecular Beam Epitaxy Growth and Photoluminescence Study of Room Temperature 1.31μm (inyga1−yas/gaas1−x Sbx)/GaAs Bilayer Quantum Wells

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Photoluminescence of GaAsSb/GaInAs Bilayer Quantum Wells Grown on GaAs Substrate

Room Temperature 1.25 Mu M Emission From High Indium Content Inxga1-Xas/Gaas Quantum Wells Grown By Molecular Beam Epitaxy

The Molecular Beam Epitaxy Growth of InGaAsSb/AlGaAsSb Quantum Well on GaAs Substrate with Emission Wavelength Of∼ 2Μm

GaAs-based Long-Wavelength InAs Bilayer Quantum Dots Grown by Molecular Beam Epitaxy

Study on high quality InGaAsSb/AlGaAsSb MQWs grown by molecular beam epitaxy

Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers

High-performance 1.32-Μm GaInNAs/GaAs Single-Quantum-well Lasers Grown by Molecular Beam Epitaxy

High Quality above 3-Μm Mid-Infrared InGaAsSb/AlGaInAsSb Multiple-Quantum Well Grown by Molecular Beam Epitaxy

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Photoluminescence of InGaAs/GaAsBi/InGaAs Type-Ii Quantum Wells Grown by Gas Source Molecular Beam Epitaxy

InGaAs/InAlAs Quantum Well Structures Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

Group III-arsenide-nitride Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 Μm

Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range

Mbe Growth And Characterization Of High-Quality Gainassb/Algaassb Strained Multiple Quantum Well Structures

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy