Abstract:We demonstrate the unique capability of molecular beam epitaxy (MBE) to synthesize III-V and group-IV semiconductors in well-defined geometrical and spatial arrangements. Based on the shrinkage of the physical size of materials from micron to nanometer dimensions, the concept of band-gap (or wavefunction) engineering in quantum wells and superlattices has been exploited. Quantum well heterostructures made of the materials systems GaAs/AlxGa1-xAs, Ga0.47In0.53As/Al0.48In0.52As, and GaSb/AlxGa1-xSb are important for photonic devices covering the wavelength range 0.65 < λ > 1.75 μm and for high-speed electron devices. New electronic phenomena based on quantum confinement and tunneling of carriers in these multiquantum well heterostructures and superlattices have led to the development of novel devices, including quantum well lasers, bistable optical devices, high-speed optical modulators, new avalanche photodiodes and staircase photomultipliers, high electron mobility transistors, hot electron transistors, etc. We will discuss some selected examples of the growth, the physics, and the performance of these devices. In addition, as an example for strained-layer superlattices, we will report on Si/SixGe1-x super-lattices where the ordering of the electronic bands is strongly affected by the built-in strain. Therefore, depending on the strain distribution, two-dimensional electron or hole gases can be obtained in selectively doped Si/SixGe1-x superlattices.

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Molecular Beam Epitaxial Growth and Electronic Transport of GaInSb/GaSb (111) Quantum Wells

Epitaxial Growth of Lattice-Matched InSb/CdTe Heterostructures on the GaAs(111) Substrate by Molecular Beam Epitaxy

Molecular Beam Epitaxial Growth and Properties of Layered Semiconductor Structures for Advanced Photonic and Electronic Devices

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Strain in GaAsSb quantum well studied by X-ray diffraction and Rutherford backscattering/channeling

Study of Optical Properties in GaAs1-xSbx/GaAs Single Quantum Wells

Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

The Behavior of Dopant Incorporation and Internal Strain in AlxGa1−xAs0.03Sb0.97 Grown by Molecular Beam Epitaxy

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Study on Epitaxial Growth of High‐Quality InSb Materials

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells