Abstract:The strong piezoelectric field present in InGaN/GaN heterostructure quantum wells severely reduces the light emission efficiency of multiple quantum well (MQW) structures. To address this issue, a strain modulation interlayer is commonly used to mitigate the piezoelectric polarization field and improve the luminescence performance of the devices. To investigate the impact and mechanism of strain modulation in the InGaN/GaN superlattice (SL), epitaxial wafers were fabricated with an n-type InGaN/GaN SL interlayer sample, along with a corresponding control sample. By measuring the temperature-dependent photoluminescence (PL) spectra of the epitaxial wafers, experimental results show that the introduction of an SL interlayer leads to a shorter emission wavelength and an enhanced internal quantum efficiency. As the temperature increases, a blue shift of the PL peak is observed. However, for the sample with an SL interlayer, the blue shift of the PL peak with temperature is relatively small. Electroluminescence (EL) experiments indicate that the introduction of an SL interlayer significantly increases the integrated intensity of the EL peak and reduces its full width at half maximum. These phenomena collectively suggest that the incorporation of a superlattice interlayer can partially suppress the quantum-confined Stark effect (QCSE) that affects the light emission efficiency. Theoretical calculations demonstrated that the introduction of a superlattice strain layer before the growth of the multiple quantum well active region can weaken the polarization-induced built-in electric field, reduce the tilt of the energy bands in the multiple quantum well active region, increase the overlap of electron and hole wave functions, enhance the emission probability, shorten the radiative recombination lifetime, and promote competition between radiative and non-radiative recombination, thereby achieving higher recombination efficiency and improved light emission intensity. This study provides experimental and theoretical evidence that the strain modulation SL interlayer can effectively improve the device performance and offer guidance for optimizing the structural design of devices.

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Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

quantum well structures grown by molecular beam epitaxy

Structural Characterization and Elastic Strain of InGaN/GaN Multiple Quantum Wells

Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Enhancement Of Electron-Longitudinal Optical Phonon Coupling In Highly Strained Ingan/Gan Quantum Well Structures

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Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Theoretical Study on Critical Thicknesses of InGaN Grown on (0001) GaN

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Anomalous Compositional Pulling Effect in Ingan/Gan Multiple Quantum Wells

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

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Study on the strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well

High Precision Determination of the Elastic Strain of InGaN/GaN Multiple Quantum Wells

The Effect of Inserting Strain-Compensated Ganas Layers on the Luminescence Properties of Gainnas/Gaas Quantum Well

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Effect of Annealing on Photoluminescence and Microstructures of Ingan/Gan Multi-Quantum Well with Mg-Doped P-Type Gan