Abstract:X-ray diffraction (XRD) reciprocal space mappings (RSM) were applied to structurally characterize InGaN multi-quantum-wells alloys with V-shape morphology (V-MQWs), epi-grown successively on the rough thick n-InGaN layer by plasma assisted molecular beam epitaxy on c-plane sapphire. In asymmetric (105) RSM, all reciprocal lattice points (RLPs) of satellite peaks have obvious shift to both sides along axis Qx, but the RLP of the zero-order peak diffracted from MQWs locates at the pseudomorphic line, aligning with the n-InGaN layer diffraction peak (substrate peak) along axis Qy. Unlike the shift of satellite peaks caused by partial strain relaxation of MQWs in asymmetric RSM, the abnormal shift in our sample is aroused by the special profiles of interfaces of V-MQWs. According to the x-ray reflectivity of the interfaces of MQWs, the quasi-symmetric V-shape MQWs can be divided into the so-called “high reflection coefficient (HRC)” area and the “high transmission coefficient (HTC)” area. In kinematics of XRD, the satellite peaks from MQWs can be attributed to the diffraction of reflected x-ray by interfaces of MQWs. In that case, the satellite peaks were modified by the interfaces of V-MQWs so that RLPs of satellite peak were contributed by the diffraction of interfaces of MQWs in HRC area, rather than in the HTC area. The zero-order peak from MQWs was still determined by the diffraction from lattice planes both within the HRC and HTC areas.

Structural Characterization and Elastic Strain of InGaN/GaN Multiple Quantum Wells

High Precision Determination of the Elastic Strain of InGaN/GaN Multiple Quantum Wells

Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Structural analysis of InxGa1-xN/GaN MQWs by different experimental methods

Determination of Chemical Composition and Average Crystal Lattice Constants of Ingan/Gan Multiple Quantum Wells

Elastic strain in InGaN and AlGaN layers

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 0 1¯m} faceted surface

GSMBE Growth and Characterization of Strained-Layer MQWs in a P-i-N Configuration

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces

Growth and Characterization of Quaternary AlInGaN Multiple Quantum Wells with Different Aluminum Composition

Mbe Growth And Characterization Of High-Quality Gainassb/Algaassb Strained Multiple Quantum Well Structures

GSMBE growth and characterization of InxGa1 − xAsInP strained-layer MQWs in a P-i-N Configuration

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well