Abstract:X-ray diffraction (XRD) reciprocal space mappings (RSM) were applied to structurally characterize InGaN multi-quantum-wells alloys with V-shape morphology (V-MQWs), epi-grown successively on the rough thick n-InGaN layer by plasma assisted molecular beam epitaxy on c-plane sapphire. In asymmetric (105) RSM, all reciprocal lattice points (RLPs) of satellite peaks have obvious shift to both sides along axis Qx, but the RLP of the zero-order peak diffracted from MQWs locates at the pseudomorphic line, aligning with the n-InGaN layer diffraction peak (substrate peak) along axis Qy. Unlike the shift of satellite peaks caused by partial strain relaxation of MQWs in asymmetric RSM, the abnormal shift in our sample is aroused by the special profiles of interfaces of V-MQWs. According to the x-ray reflectivity of the interfaces of MQWs, the quasi-symmetric V-shape MQWs can be divided into the so-called “high reflection coefficient (HRC)” area and the “high transmission coefficient (HTC)” area. In kinematics of XRD, the satellite peaks from MQWs can be attributed to the diffraction of reflected x-ray by interfaces of MQWs. In that case, the satellite peaks were modified by the interfaces of V-MQWs so that RLPs of satellite peak were contributed by the diffraction of interfaces of MQWs in HRC area, rather than in the HTC area. The zero-order peak from MQWs was still determined by the diffraction from lattice planes both within the HRC and HTC areas.

Determination of Chemical Composition and Average Crystal Lattice Constants of Ingan/Gan Multiple Quantum Wells

An Approach to Determine the Chemical Composition in Ingan/Gan Multiple Quantum Wells

Structural analysis of InxGa1-xN/GaN MQWs by different experimental methods

Structural Characterization and Elastic Strain of InGaN/GaN Multiple Quantum Wells

High Precision Determination of the Elastic Strain of InGaN/GaN Multiple Quantum Wells

Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces

Anomalous Compositional Pulling Effect in Ingan/Gan Multiple Quantum Wells

Achieve High-Quality Ingan/Gan Multiple Quantum Wells on La0.3sr1.7altao6 Substrates

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Growth and Characterization of Quaternary AlInGaN Multiple Quantum Wells with Different Aluminum Composition

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Correlation Between the Structural and Cathodoluminescence Properties in Ingan/Gan Multiple Quantum Wells with Large Number of Quantum Wells

Characterization of Asymmetric Gan/Ingan Multiple Quantum Well

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures