Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Structural analysis of InxGa1-xN/GaN MQWs by different experimental methods

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Probing alloy formation using different excitonic species: The particular case of InGaN

X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces

Study on Electroluminescence Spectra of InxGa1－xN/GaN-MQWs Materials with High Indium Contents

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

Investigation of the influence of InGaN underlying layers on the optical properties of InGaN quantum well structures

Individually Resolved Luminescence from Closely Stacked GaN/AlN Quantum Wells

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

The Discrepancies Between Theory and Experiment in the Optical Emission of Monolayer In(Ga)N Quantum Wells Revisited by Transmission Electron Microscopy

Fabrication and Characterization of Novel Monolayer InN Quantum Wells in a GaN Matrix