Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Intensive Luminescence from a Thick, Indium-Rich In0.7Ga0.3N Film

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Optical and Spatial Resolved Cathodoluminescence Study of Phase Separation in Green InGaN Sandwiched Structure Grown on GaN Nanorods by MOCVD

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Investigation of InGaN Layer Grown under In-Rich Condition by Reflectance Difference Spectroscopy Microscope

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Cathodoluminescence Spectroscopy in Graded In<sub>x</sub>Ga<sub>1-x</sub>N

Cathodoluminescence Study of InGaN/GaN Thin Film

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer

Probing alloy formation using different excitonic species: The particular case of InGaN

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD