Abstract:In this work, the evolution of the InGaN layer growth on the ridge shaped GaN was studied. A mass transport model was presented to simulate the epitaxy process of the InGaN layer. The model consisted of two consecutive components, gas-phase diffusion process and surface diffusion process. The mean lifetime of adatoms on epitaxial sur face was associated with their reaction rate in this model. An InGaN layer on ridge shaped GaN, including (0002) and {1122} facets, was grown by metal organic chemical vapor deposition to confirm the mass transport model. Gradient indium content distribution and inhomogeneous thickness of the InGaN layer were observed. Simulation of the InGaN layer growth process was performed by finite difference method with the mass transport model. By analyzing the results from calculations and experiments, the origins of the InGaN layer characteristics were attributed to the two diffusion components in the growth process. Surface diffusion resulted in the inhomogeneous thickness and gas-phase diffusion chiefly led to the gradient indium content. In addition, the adatoms reaction rate on epitaxial surface determined their mean lifetime as speculated by the analysis. The demonstration of the growth process of InGaN layer offers valuable insight in obtaining high efficiency white light emitting diodes by selective area growth technology. (c) 2008 American Institute of Physics.

Investigation of InGaN Layer Grown under In-Rich Condition by Reflectance Difference Spectroscopy Microscope

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy

Optical and Electronic Properties of InGaN Thin Film Layers

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Study of InGaN Films Grown by MOCVD

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Growth and Optical Properties of Double Heterostructure GaN/InGaN/GaN Films with Large Composition

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

Analysis Of Mass Transport Mechanism In Ingan Epitaxy On Ridge Shaped Selective Area Growth Gan By Metal Organic Chemical Vapor Deposition

Correlation Between the Infrared Reflectance and Microstructure of Thin Gallium Nitride Films Grown on Silicon Substrates

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Photoluminescence and Absorption in InGaN Films with InN Segregation

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition