Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition
Tse Yang Lin,Yee Ling Chung,Lin Li,Shude Yao,Y. C. Lee,Zhe Chuan Feng,Ian T. Ferguson,Weijie Lu
DOI: https://doi.org/10.1117/12.859106
2010-01-01
Abstract:AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 degrees C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 degrees C on low-temperature AlN nucleation layers.The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A(1) longitudinal optical (LO) phonon modes, and E-2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.