Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence and Absorption in InGaN Films with InN Segregation

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Low Temperature Photoluminescence Properties of InGaN Films Grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 Substrates by Low Pressure MOVPE

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Low temperature photoluminescence properties of InGaN films grown on (01(1)over-bar2) Al2O3 and (0001) Al2O3 substrates by low pressure MOVPE

InN Segregation in InGaN Layers Grownby Metalorganic Chemical Vapor Deposition

Photoluminescence and Pressure Effects in Short Period Inn/Ngan Superlattices

Luminescence Properties of InxGa1−xN (x∼ 0.04) Films Grown by Metal Organic Vapour Phase Epitaxy

Optical and Electronic Properties of InGaN Thin Film Layers

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Photoluminescence of N‐inn with Low Electron Concentrations

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

Study on the Photoluminescence Properties of Inn Films

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Intensive Luminescence from a Thick, Indium-Rich In0.7Ga0.3N Film

Cathodoluminescence Spectroscopy in Graded InxGa1−xN

Cathodoluminescence Spectroscopy in Graded In<sub>x</sub>Ga<sub>1-x</sub>N

Investigation of photoluminescence excitation spectra from GaN films grown by low-pressure MOVPE

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer